In this paper, we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel silicon carbide metal–oxide–semiconductor field-effect transistors in push–pull configuration. The switch is capable of switching high voltages up to 600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths 20 ns. Using this switch, it was demonstrated that, from the charge state distribution of bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic energy, single charge states can be separated by fast switching of the high voltage applied to a Bradbury–Nielsen Gate with a resolving power of about 100.

C. Schweigera, M. Door, P. Filianin, J. Herkenhoff, K. Kromer, D. Lange, D. Marschall, A. Rischka, T. Wagner, S. Eliseev, K. Blaum:  “Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate”, Rev. Sci. Instrum. 93, (2022).


Related to Project B01