Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate

Abstract:

In this paper, we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel silicon carbide metal–oxide–semiconductor field-effect transistors in push–pull configuration. The switch is capable of switching high voltages up to 600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths ≥20 ns. Using this switch, it was demonstrated that, from the charge state distribution of bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic energy, single charge states can be separated by fast switching of the high voltage applied to a Bradbury–Nielsen Gate with a resolving power of about 100.

C. Schweigera, M. Door, P. Filianin, J. Herkenhoff, K. Kromer, D. Lange, D. Marschall, A. Rischka, T. Wagner, S. Eliseev, K. Blaum:  “Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate”, Rev. Sci. Instrum. 93, (2022).

https://aip.scitation.org/doi/pdf/10.1063/5.0083515

Related to Project B01